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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺(c猫)

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > IRF5806TRPBF

IRF5806TRPBF 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2023/3/10 13:55:11 鏌ョ湅 闁辫畝锛�309

    椤炲垾锛氬垎闆㈠紡鍗婂皫(d菐o)楂旂敘(ch菐n)鍝�

    瀹跺涵锛歁OSFET锛孏aNFET - 鍠�

    绯诲垪锛欻EXFET?

    


鐩寗

姒傝堪

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    瀹跺涵锛歁OSFET锛孏aNFET - 鍠�

    绯诲垪锛欻EXFET?

    FET 鍨嬶細MOSFET P 閫氶亾锛岄噾灞哀鍖栫墿

    FET 鐗归粸(di菐n)锛氭(bi膩o)婧�(zh菙n)鍨�

    闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25掳 C锛�86 姣瓙 @ 4A, 4.5V

    婕忔サ鑷虫簮妤甸浕澹�(Vdss)锛�20V

    闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25掳 C锛�4A

    Id 鏅�(sh铆)鐨� Vgs(th)锛堟渶澶э級锛�1.2V @ 250渭A

    闁橀浕鑽�(Qg) @ Vgs锛�11.4nC @ 4.5V

    鍦� Vds 鏅�(sh铆)鐨勮几鍏ラ浕瀹�(Ciss) 锛�594pF @ 15V

    鍔熺巼 - 鏈�澶э細2W

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    灏佽/澶栨锛歁icro6?(TSOP-6)

    鍖呰锛氬付鍗� (TR)

    渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細Micro6?(TSOP-6)


璩囨枡

寤犲晢
Infineon / IR

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  • 鍨嬭櫉(h脿o)
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

irf5806trpbf鍙冩暩(sh霉)

  • 妯�(bi膩o)婧�(zh菙n)鍖呰3,000
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 鍠�
  • 绯诲垪HEXFET®
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  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)20V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C4A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C86 姣瓙 @ 4A锛�4.5V
  • Id 鏅�(sh铆)鐨� Vgs(th)锛堟渶澶э級1.2V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs11.4nC @ 4.5V
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  • 鍔熺巼 - 鏈�澶�2W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
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  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�Micro6?锛圱SOP-6锛�
  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūIRF5806TRPBF-NDIRF5806TRPBFTR