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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫 鐧婚寗 | 鍏嶈不娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫 > IC鐧剧 > GB05SLT12-220

GB05SLT12-220 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2023/3/3 14:52:01 鏌ョ湅 闁辫畝锛�544

    鍒堕�犲晢锛欸eneSiCSemiconductor

    RoHS锛氭槸

 

鐩寗

姒傝堪

    鍒堕�犲晢锛欸eneSiCSemiconductor

    RoHS锛氭槸

    鐢㈠搧锛歋chottkySiliconCarbideDiodes

    灏佽锛欱ulk


璩囨枡

寤犲晢
GeneSiC Semiconductor

gb05slt12-220鎺ㄨ枽渚涙噳鍟� 鏇村>

  • 鐢㈠搧鍨嬭櫉
  • 渚涙噳鍟�
  • 鏁搁噺
  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児

gb05slt12-220璩囨枡 鏇村>

  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

gb05slt12-220鍙冩暩

  • 鍒堕�犲晢GeneSiC Semiconductor
  • 鐢㈠搧Schottky Silicon Carbide Diodes
  • 宄板�煎弽鍚戦浕澹�1200 V
  • 姝ｅ悜閫ｇ簩(x霉)闆绘祦5 A
  • 鏈�澶ф氮娑岄浕娴�32 A
  • 鎭㈠京鏅傞枔25 ns
  • 姝ｅ悜闆诲涓嬮檷1.9 V
  • 鏈�澶у弽鍚戞紡娉勯浕娴�26 uA
  • 鏈�澶у姛鐜囪�楁暎42 W
  • 宸ヤ綔婧害鑼冨湇- 55 C to + 175 C
  • 瀹夎棰ㄦ牸Through Hole
  • 灏佽 / 绠遍珨TO-220
  • 灏佽Bulk
  • 鏈�澶т簩妤电闆诲20 pF
  • 宸ュ粻鍖呰鏁搁噺50