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鍨嬭櫉锛欸A1206A3R9DBCBR31G
銆�銆�椤炲瀷锛歂-Channel Power MOSFET
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銆�銆�鏈�澶ф煹婧愰浕澹�(Vgs)锛毬�20V
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銆�銆�灏庨�氶浕闃�(Rds(on))锛�3.5m惟锛堝吀鍨嬪�硷級
銆�銆�鏌垫サ闆昏嵎(Qg)锛�78nC
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銆�銆�灏佽褰㈠紡锛歍O-247-3L
GA1206A3R9DBCBR31G 鐨勪富瑕佺壒鎬у寘鎷細
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銆�銆�6. 绗﹀悎 RoHS 妯欐簴锛岀挵(hu谩n)淇濅笖婊胯冻鍦嬮殯娉曡(gu墨)瑕佹眰銆�
瑭茶姱鐗囩殑涓昏鎳夌敤鍫存櫙鍖呮嫭锛�
銆�銆�1. 闁嬮棞妯″紡闆绘簮 (SMPS)锛岀敤浜庣瓎瑷樻湰闆昏叇閬╅厤鍣�銆佹湇鍕欏櫒闆绘簮绛夎ō鍌欍��
銆�銆�2. DC-DC 杞�(zhu菐n)鎻涘櫒锛岀壒鍒ユ槸鍦ㄩ渶瑕侀珮鏁堣兘閲忚綁(zhu菐n)鎻涚殑姹借粖闆诲瓙绯荤当(t菕ng)涓�銆�
銆�銆�3. 闆绘椹�(q奴)鍕曚腑鐨勯浕姗熸帶鍒�銆�
銆�銆�4. 闆绘睜绠＄悊绯荤当(t菕ng) (BMS)锛岀敤浜庨浕鍕曟苯杌婂強鍎茶兘绯荤当(t菕ng)鐨勯浕姹犱繚璀疯垏鍧囪 銆�
銆�銆�5. 宸ユキ(y猫)绱氶�嗚畩鍣ㄥ拰 UPS 绯荤当(t菕ng)锛屾彁渚涘彲闈犵殑鍔熺巼杓稿嚭鑸囦繚璀峰姛鑳姐��
GA1206A3R9DBC, IRF3710, FDP5570N
