椤炲瀷锛氬�炲��(qi谩ng)鍨� E 婧濋亾 MOSFET
銆�銆�鏈�澶ф紡婧愰浕澹擄細650V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛�4A
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銆�銆�鏌垫サ闆昏嵎锛�75nC
銆�銆�杓稿叆闆诲�癸��1500pF
銆�銆�绺介浕鑽凤細120nC
銆�銆�闁嬮棞(gu膩n)闋荤巼锛氭敮鎸侀珮閬�(d谩) 5MHz
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銆�銆�灏佽�濆舰寮忥細TO-263

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銆�銆�3. 鐔辩┅(w臎n)瀹氭�у挤(qi谩ng)锛氳┎鑺�鐗囪兘澶犲湪杓冮珮婧�搴﹁寖鍦嶅収(n猫i)鍙�闈犻��(y霉n)琛�锛岀⒑淇濆湪鎯″姡鐠�(hu谩n)澧冧笅鐨勭┅(w臎n)瀹氳〃鐝�(xi脿n)銆�
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姝ゆ�惧姛鐜� MOSFET 寤ｆ硾鎳�(y墨ng)鐢ㄤ簬澶氬��(g猫)闋�(l菒ng)鍩燂紝鍖呮嫭浣嗕笉闄愪簬浠ヤ笅鏂归潰锛�
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GAN063-650WSA
銆�銆�GAN100-650ESA
銆�銆�GCS10065D