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UMJ212CB7105KGHT 鏄竴娆鹃珮鎬ц兘鐨� MOSFET锛堥噾灞哀鍖栫墿鍗婂皫(d菐o)楂斿牬鏁堟噳(y墨ng)鏅堕珨绠★級鑺墖锛屽唬娉涙噳(y墨ng)鐢ㄤ簬闆绘簮绠＄悊銆侀浕姗熼﹨(q奴)鍕曘�侀枊闂�(gu膩n)闆昏矾鍜岄珮闋讳俊铏熻檿鐞嗙瓑鍫存櫙銆傝┎鍣ㄤ欢閲囩敤浜嗗厛閫茬殑鍒堕�犲伐钘�锛屽叿鏈変綆灏�(d菐o)閫氶浕闃�銆佸揩閫熼枊闂�(gu膩n)閫熷害浠ュ強鍑鸿壊鐨勭啽鎬ц兘銆�
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椤炲瀷锛歁OSFET
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銆�銆�鏈�澶ф煹婧愰浕澹� VGS锛毬�20V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦 ID锛�40A
銆�銆�灏�(d菐o)閫氶浕闃� RDS(on)锛�4m惟
銆�銆�鏌垫サ闆昏嵎 Qg锛�75nC
銆�銆�闁嬮棞(gu膩n)鏅傞枔 t(on/off)锛�15/10ns
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55鈩� 鑷� +175鈩�
銆�銆�灏佽褰㈠紡锛歍O-263
閫欐 MOSFET 鍏锋湁浠ヤ笅椤憲鐗归粸锛�
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UMJ212CB7105KGHT 涓昏鎳�(y墨ng)鐢ㄤ簬浠ヤ笅骞惧�嬮牁(l菒ng)鍩燂細
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IRFZ44N, FDP5580, STP55NF06L
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