椤�(l猫i)鍨嬶細N-Channel MOSFET
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銆�銆�鏈�澶ф煹婧愰浕澹� (VGS)锛毬�20V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦 (ID)锛�49A
銆�銆�灏�(d菐o)閫氶浕闃� (RDS(on))锛�3.8m惟
銆�銆�鏌垫サ闆昏嵎 (Qg)锛�34nC
銆�銆�绺界啽闃� (Rth(j-a))锛�40掳C/W
銆�銆�宸ヤ綔婧�搴﹁寖鍦嶏��-55掳C to +175掳C

SIR464DP-T1-GE3 鎻愪緵浜嗗嚭鑹茬殑闆绘埃鎬ц兘鍜屽彲闈犳�э紝涓昏�佺壒榛�(di菐n)鍖呮嫭锛�
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閫欐�� MOSFET 鍣ㄤ欢闈炲父閬╁悎闇�瑕侀珮鏁堣兘鍜岄珮鍙�闈犳�х殑鍫�(ch菐ng)鏅�锛屽吀鍨嬫噳(y墨ng)鐢ㄩ牁(l菒ng)鍩熷�備笅锛�
銆�銆�1. 闁�(k膩i)闂�(gu膩n)妯″紡闆绘簮 (SMPS) 鍜� DC/DC 杞�(zhu菐n)鎻涘櫒銆�
銆�銆�2. 闆诲嫊(d貌ng)宸ュ叿鍙婂�剁敤闆诲櫒涓�鐨勯浕姗�(j墨)椹�(q奴)鍕�(d貌ng)闆昏矾銆�
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銆�銆�6. 閫氫俊鍩虹��(ch菙)瑷�(sh猫)鏂戒腑鐨勯浕淇￠浕婧愬柈鍏�銆�

SIR464DP,
銆�銆�SIR464DP-07-E,
銆�銆�SIR464DP_T1_GE3,
銆�銆�Infineon 鍚岀郴鍒楀叾浠栫増鏈�濡� IRFH5010TRPbF