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鎮ㄥソ锛屾杩庝締(l谩i)鍒扮董搴�(k霉)闆诲瓙甯傚牬(ch菐ng)缍�(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺(c猫)

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩�(g貌u)缍�(w菐ng) > IC鐧剧 > SI9410BDY-T1-GE3

SI9410BDY-T1-GE3 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2025/4/25 18:37:33 鏌ョ湅 闁辫畝锛�26

SI9410BDY-T1-GE3 鏄竴娆剧敱 Vishay 鐢熺敘(ch菐n)鐨� N 婧濋亾澧炲挤(qi谩ng)鍨� MOSFET銆傝┎鍣ㄤ欢閲囩敤灏忓瀷琛ㄩ潰璨艰灏佽锛岄仼鐢ㄤ簬闇�瑕侀珮鏁堝姛鐜囬枊闂�(gu膩n)鐨勬噳(y墨ng)鐢ㄥ牬(ch菐ng)鏅�銆傚畠鍏锋湁浣庡皫(d菐o)閫氶浕闃诲拰蹇�熼枊闂�(gu膩n)閫熷害鐨勭壒榛�(di菐n)锛岃兘澶犻’钁楅檷浣庡姛鐜囨悕鑰楀苟鎻愰珮绯荤当(t菕ng)鏁堢巼銆�

鍙冩暩(sh霉)

鏈�澶ф紡婧愰浕澹擄細60V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛�25A
銆�銆�灏�(d菐o)閫氶浕闃伙紙鍏稿瀷鍊硷級锛�8m惟
銆�銆�鏌垫サ闆昏嵎锛�20nC
銆�銆�绺藉姛鑰楋細2.7W
銆�銆�宸ヤ綔绲�(ji茅)婧寖鍦嶏細-55鈩� 鑷� +175鈩�

鐗规��

SI9410BDY-T1-GE3 鍏锋湁闈炲父浣庣殑灏�(d菐o)閫氶浕闃�锛岄�欎娇寰楀叾鍦ㄩ珮闆绘祦鎳�(y墨ng)鐢ㄤ腑琛ㄧ従(xi脿n)鍑鸿壊銆傛澶栵紝鍏跺揩閫熺殑闁嬮棞(gu膩n)鎬ц兘娓涘皯浜嗛枊闂�(gu膩n)鎼嶈��锛屽緸鑰屾彁鍗囦簡鏁撮珨鏁堢巼銆傚櫒浠剁殑宸ヤ綔婧害鑼冨湇瀵唬锛屽彲浠ラ仼鎳�(y墨ng)鍚勭ó鍤�(y谩n)鑻涚挵(hu谩n)澧冧笅鐨勬噳(y墨ng)鐢ㄩ渶姹�銆傛澶�锛岃┎ MOSFET 鐨勫皝瑁濆舰寮忕偤 TO-263-3 (DPAK)锛屽叿鍌欏嚭鑹茬殑鏁ｇ啽鎬ц兘銆�
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si9410bdy-t1-ge3鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

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  • 寤犲晢
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si9410bdy-t1-ge3鍙冩暩(sh霉)

  • 妯�(bi膩o)婧�(zh菙n)鍖呰2,500
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 鍠�
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  • FET 鐗归粸(di菐n)閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)30V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C6.2A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C24 姣瓙 @ 8.1A锛�10V
  • Id 鏅�(sh铆)鐨� Vgs(th)锛堟渶澶э級3V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs23nC @ 10V
  • 杓稿叆闆诲 (Ciss) @ Vds-
  • 鍔熺巼 - 鏈�澶�1.5W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
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  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�8-SOICN
  • 鍖呰甯跺嵎 (TR)