SI4936CDY-T1-GE3 鏅�(sh铆)闁擄細2025/5/8 8:50:24 闁辫畝锛�23

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銆€銆€瑭插瀷铏�(h脿o)涓殑鍚庣洞 '-T1-GE3' 琛ㄧず Vishay 鐨勬(bi膩o)婧�(zh菙n)鍗峰付灏佽褰㈠紡锛屽苟绗﹀悎鐠�(hu谩n)淇濊姹傦紙鐒￠墰涓旂鍚� RoHS 妯�(bi膩o)婧�(zh菙n)锛�銆�

鍙冩暩(sh霉)

椤炲瀷锛歂婧濋亾 MOSFET
銆€銆€鏈€澶ф紡婧愰浕澹�(Vdss)锛�60V
銆€銆€鏈€澶ф煹婧愰浕澹�(Vgs)锛毬�20V
銆€銆€閫ｇ簩(x霉)婕忔サ闆绘祦(Id)锛�32A
銆€銆€灏�(d菐o)閫氶浕闃�(Rds(on))锛�3.8m惟 @ Vgs=10V
銆€銆€鏌垫サ闆昏嵎(Qg)锛�55nC
銆€銆€杓稿叆闆诲(Ciss)锛�3760pF
銆€銆€鍙嶅悜鎭㈠京(f霉)鏅�(sh铆)闁�(trr)锛�70ns
銆€銆€宸ヤ綔绲�(ji茅)婧寖鍦嶏細-55掳C 鑷� +175掳C

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SI4936CDY-T1-GE3 閲囩敤浜� Vishay 鐨勫厛閫�(j矛n)宸ヨ棟鍒堕€�锛屽叿鍌欎互涓嬮’钁楃壒鎬э細
銆€銆€1. 妤典綆鐨勫皫(d菐o)閫氶浕闃� (Rds(on))锛屾湁鍔╀簬闄嶄綆鍔熻€楀苟鎻愬崌绯荤当(t菕ng)鏁堢巼銆�
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閫欐 MOSFET 涓昏鎳�(y墨ng)鐢ㄤ簬浠ヤ笅闋�(l菒ng)鍩燂細
銆€銆€1. 闁嬮棞(gu膩n)闆绘簮 (SMPS) 涓殑鍚屾鏁存祦鍣�銆�
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