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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > SI4816BDY-T1-GE3

SI4816BDY-T1-GE3 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2025/4/25 14:26:31 鏌ョ湅 闁辫畝锛�34

SI4816BDY-T1-GE3 鏄竴娆剧敱 Vishay 鐢熺敘(ch菐n)鐨� N 婧濋亾澧炲挤(qi谩ng)鍨嬪姛鐜� MOSFET銆傝┎鍣ㄤ欢閲囩敤 TrenchFET 绗笁浠ｆ妧琛�(sh霉)鍒堕��锛屽叿鏈変綆灏�(d菐o)閫氶浕闃�銆侀珮鏁堢巼鍜屽揩閫熼枊闂�(gu膩n)鎬ц兘绛夌壒鎬�銆傚叾灏佽褰㈠紡鐐� TinySOT-23 灏佽锛圫C-70锛夛紝閬╃敤浜庨渶瑕佺瘈(ji茅)鐪佺┖闁撶殑鎳�(y墨ng)鐢ㄥ牬鏅�銆�
銆�銆�瑭� MOSFET 鐨勫吀鍨嬫噳(y墨ng)鐢ㄥ寘鎷矤(f霉)杓夊垏鎻涖�丏C-DC 杞�(zhu菐n)鎻涘櫒銆侀浕婧愮鐞嗛浕璺互鍙婇浕姹犱緵闆昏ō(sh猫)鍌欎腑鐨勫姛鐜囩鐞�銆�

鍙冩暩(sh霉)

鏈�澶ф紡婧愰浕澹擄細30V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛�1.9A
銆�銆�灏�(d菐o)閫氶浕闃伙細160m惟
銆�銆�鏌垫サ闆昏嵎锛�4.5nC
銆�銆�绺介浕瀹癸細120pF
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55鈩� 鑷� +150鈩�

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瑭插姛鐜� MOSFET 甯哥敤浜庝究鏀滃紡闆诲瓙瑷�(sh猫)鍌欎腑鐨勮矤(f霉)杓夐枊闂�(gu膩n)銆丏C-DC 杞�(zhu菐n)鎻涘櫒銆侀浕姹犱繚璀�(h霉)闆昏矾銆丩ED 椹�(q奴)鍕曞櫒浠ュ強娑堣不(f猫i)椤為浕瀛愮敘(ch菐n)鍝佺殑闆绘簮绠＄悊妯″銆�
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鏇夸唬鍨嬭櫉

SI4402DY-T1-E3, SI4829CDY-T1-GE3

si4816bdy-t1-ge3鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

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  • 渚涙噳(y墨ng)鍟�
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  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児(ji脿)

si4816bdy-t1-ge3璩囨枡 鏇村>

  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
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si4816bdy-t1-ge3鍙冩暩(sh霉)

  • 妯�(bi膩o)婧�(zh菙n)鍖呰2,500
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 闄ｅ垪
  • 绯诲垪-
  • FET 鍨�2 鍊�(g猫) N 婧濋亾锛堥洐锛�
  • FET 鐗归粸(di菐n)閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)30V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C5.8A锛�8.2A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C18.5 姣瓙 @ 6.8A锛�10V
  • Id 鏅�(sh铆)鐨� Vgs(th)锛堟渶澶э級3V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs10nC @ 5V
  • 杓稿叆闆诲 (Ciss) @ Vds-
  • 鍔熺巼 - 鏈�澶�1W锛�1.25W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨8-SOIC锛�0.154"锛�3.90mm 瀵級
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  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūSI4816BDY-T1-GE3TR