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鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > SI1013X-T1-GE3

SI1013X-T1-GE3 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2023/6/7 11:05:11 鏌ョ湅 闁辫畝锛�246

鐢�(ch菐n)鍝佺ó椤烇細MOSFET灏忎俊铏�(h脿o)

鐩寗

姒傝堪

鍒堕�犲晢锛歏ishay

鐢�(ch菐n)鍝佺ó椤烇細MOSFET灏忎俊铏�(h脿o)

RoHS锛氭槸

閰嶇疆锛歋ingle

鏅堕珨绠℃サ鎬э細P-Channel

姹叉サ/婧愭サ鎿婄┛闆诲锛�20V

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鍔熺巼鑰楁暎锛�250mW

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鏈�灏忓伐浣滄韩搴︼細-55鈩�

璩囨枡

寤犲晢
VISHAY
Vishay Semiconductors

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  • 鍨嬭櫉(h脿o)
  • 鎻忚堪
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  • 闁辫涓嬭級

si1013x-t1-ge3鍙冩暩(sh霉)

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  • 瀹跺涵FET - 鍠�
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  • 鍔熺巼 - 鏈�澶�250mW
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
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  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūSI1013X-T1-GE3TR