鏅傞枔锛�2023/6/7 11:11:36
闁辫畝锛�255
椤炲垾锛氬垎闆㈠紡鍗婂皫楂旂敘(ch菐n)鍝�
瀹跺涵锛歁OSFET锛孏aNFET - 鍠�
FET 鍨嬶細MOSFET N 閫氶亾锛岄噾灞哀鍖栫墿
FET 鐗归粸锛氶倧杓浕骞抽杸
闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25掳 C锛�700 姣瓙 @ 600mA, 4.5V
婕忔サ鑷虫簮妤甸浕澹�(Vdss)锛�20V
闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25掳 C锛�500mA
Id 鏅傜殑 Vgs(th)锛堟渶澶э級锛�900mV @ 250渭A
闁橀浕鑽�(Qg) @ Vgs锛�0.75nC @ 4.5V
鍦� Vds 鏅傜殑杓稿叆闆诲(Ciss) 锛�-
鍔熺巼 - 鏈�澶э細250mW
瀹夎椤炲瀷锛氳〃闈㈣布瑁�
灏佽/澶栨锛歋C-89-3
鍖呰锛氬付鍗� (TR)
| 寤犲晢 |
|---|
| VISHAY |
| Vishay Semiconductors |
