鏅傞枔锛�2024/9/20 9:39:30
闁辫畝锛�409
鍦∣N Semiconductor鐨勫公鍔╀笅锛屾斁澶ч浕瀛愪俊铏熷苟鍦ㄥ畠鍊戜箣闁撳垏鎻�锛汵TLJS4114NT1G鍔熺巼MOSFET銆傚叾鏈�澶у姛鑰楃偤1920 mW銆傜偤浜嗙⒑淇濆畨鍏ㄤ氦浠�锛屽苟鍏佽ū鍦ㄤ氦浠樺悗蹇�熷畨瑁濇绲勪欢锛岃閬嬫湡闁撳皣鍏跺皝瑁濆湪鑶犲付鍜屽嵎绛掑寘瑁濅腑銆傞�欑óN婧濋亾MOSFET鏅堕珨绠′互澧炲挤妯″紡宸ヤ綔銆傝┎MOSFET鏅堕珨绠＄殑鏈�浣庡伐浣滄韩搴︾偤-55掳C锛屾渶楂樺伐浣滄韩搴︾偤150掳C銆�
椤炲垾锛氬垎闆㈠紡鍗婂皫楂旂敘(ch菐n)鍝�
銆�銆�瀹跺涵锛歁OSFET锛孏aNFET-鍠�
銆�銆�FET鍨嬶細MOSFET N閫氶亾锛岄噾灞哀鍖栫墿
銆�銆�FET鐗归粸锛氶倧杓浕骞抽杸
銆�銆�闁嬫厠(t脿i)Rds锛堟渶澶э級Id,Vgs 25鈩冿細35姣瓙2A,4.5V
銆�銆�婕忔サ鑷虫簮妤甸浕澹�(Vdss)锛�30V
銆�銆�闆绘祦-閫ｇ簩(x霉)婕忔サ(Id)25鈩冿細3.6A
銆�銆�闁橀浕鑽�(Qg)Vgs锛�13nC 4.5V
銆�銆�鍦╒ds鏅傜殑杓稿叆闆诲(Ciss)锛�650pF 15V
銆�銆�鍔熺巼-鏈�澶э細700mW
銆�銆�鐒￠沟绱犵媭鎱�(t脿i)锛欻alogen Free
銆�銆�閫氶亾鏁�(sh霉)锛�
銆�銆�閲濊叧鏁�(sh霉)锛�
銆�銆�婕忔簮妤甸浕闃伙細0.0203惟
銆�銆�妤垫�э細N-Channel
銆�銆�鑰楁暎鍔熺巼锛�3.3 W
銆�銆�闁惧�奸浕澹擄細550 mV
銆�銆�婕忔簮妤甸浕澹�(Vds)锛�30 V
銆�銆�婕忔簮鎿婄┛闆诲锛�30 V
銆�銆�鏌垫簮鎿婄┛闆诲锛毬�12.0 V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦(Ids)锛�7.80 A
銆�銆�涓婂崌鏅傞枔锛�9 ns
銆�銆�杓稿叆闆诲(Ciss)锛�650pF 15V(Vds)
銆�銆�椤嶅畾鍔熺巼(Max)锛�700 mW
銆�銆�涓嬮檷鏅傞枔锛�4 ns
銆�銆�宸ヤ綔婧害(Max)锛�150鈩�
銆�銆�宸ヤ綔婧害(Min)锛�-55鈩�
銆�銆�鑰楁暎鍔熺巼(Max)锛�700mW(Ta)
銆�銆�寮曡叧鏁�(sh霉)锛�
銆�銆�闀峰害锛�2 mm
銆�銆�瀵害锛�2 mm
銆�銆�楂樺害锛�0.75 mm
銆�銆�宸ヤ綔婧害锛�-55鈩儈150鈩�(TJ)
銆�銆�瀹夎椤炲瀷锛氳〃闈㈣布瑁�
銆�銆�灏佽/澶栨锛�6-VDFN
銆�銆�鍖呰锛氬付鍗�(TR)
銆�銆�渚涙噳鍟嗚ō鍌欏皝瑁濓細6-TDFN
銆�銆�鍏跺畠鍚嶇ū锛歂TLJS4114NT1G-NDNTLJS4114NT1GOSTR
WDFN灏佽鎻愪緵澶栭湶鎺掓按澧婏紝浠ュ鐝�(xi脿n)鑹ソ鐨勭啽鍌冲皫
銆�銆�2x2 mm鍗犲湴闈㈢⿳锛岃垏SC鐩稿悓?88
銆�銆�2x2 mm灏佽涓渶浣嶳DS锛堟墦闁嬶級
銆�銆�1.8 V RDS锛堥枊锛夐瀹氬��锛岀敤浜庝綆澹撻倧杓浕骞抽杸椹呭嫊鍣ㄦ搷浣�
銆�銆�钖勫瀷锛�<0.8 mm锛�锛屼究浜庡湪钖勭挵(hu谩n)澧冧腑瀹夎
銆�銆�閫欐槸Pb鍏嶈不瑷倷
