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鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩�(g貌u)缍�(w菐ng) > IC鐧剧 > NDC652P_F095

NDC652P_F095 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2023/11/6 17:44:07 鏌ョ湅 闁辫畝锛�245

鐢�(ch菐n)鍝佺ó椤烇細MOSFET灏忎俊铏�(h脿o)

鐩寗

姒傝堪

鍒堕�犲晢锛欶airchildSemiconductor
鐢�(ch菐n)鍝佺ó椤烇細MOSFET灏忎俊铏�(h脿o)
RoHS锛氭槸
閰嶇疆锛歋ingleTripleDrainDualSource
鏅堕珨绠℃サ鎬э細P-Channel
姹叉サ/婧愭サ鎿婄┛闆诲锛�30V
闁�/婧愭搳绌块浕澹擄細20V
婕忔サ閫ｇ簩(x霉)闆绘祦锛�2.4A
鍔熺巼鑰楁暎锛�1600mW
鏈�澶у伐浣滄韩搴︼細+150鈩�

瀹夎棰�(f膿ng)鏍硷細SMD/SMT
灏佽/绠遍珨锛歋uperSOT-6
灏佽锛歊eel
鏈�灏忓伐浣滄韩搴︼細-55鈩�

StandardPackQty锛�3000

ndc652p_f095鍙冩暩(sh霉)

  • 鍒堕�犲晢Fairchild Semiconductor
  • 鐢�(ch菐n)鍝佺ó椤�MOSFET
  • 鏅堕珨绠℃サ鎬�P-Channel
  • 姹叉サ/婧愭サ鎿婄┛闆诲30 V
  • 闁�/婧愭搳绌块浕澹�20 V
  • 婕忔サ閫ｇ簩(x霉)闆绘祦2.4 A
  • 閰嶇疆Single Triple Drain Dual Source
  • 鏈�澶у伐浣滄韩搴�+ 150 C
  • 瀹夎棰�(f膿ng)鏍�SMD/SMT
  • 灏佽 / 绠遍珨SuperSOT-6
  • 灏佽Reel
  • 涓嬮檷鏅�(sh铆)闁�26 ns
  • 鏈�灏忓伐浣滄韩搴�- 55 C
  • 鍔熺巼鑰楁暎1600 mW
  • 涓婂崌鏅�(sh铆)闁�26 ns
  • 宸ュ粻鍖呰鏁�(sh霉)閲�3000
  • 鍏稿瀷闂�(gu膩n)闁夊欢閬叉檪(sh铆)闁�22 ns