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鎮ㄥソ锛屾杩庝締(l谩i)鍒扮董搴�(k霉)闆诲瓙甯傚牬(ch菐ng)缍�(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺(c猫)

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩�(g貌u)缍�(w菐ng) > IC鐧剧 > KSC1008GTA_Q

KSC1008GTA_Q 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2023/12/6 11:27:44 鏌ョ湅 闁辫畝锛�147

鐢�(ch菐n)鍝佺ó椤�(l猫i)锛氶洐妤靛皬淇¤櫉(h脿o)

鐩寗

姒傝堪

鍒堕�犲晢锛欶airchildSemiconductor
鐢�(ch菐n)鍝佺ó椤�(l猫i)锛氶洐妤靛皬淇¤櫉(h脿o)
RoHS锛氬惁
閰嶇疆锛歋ingle
鏅堕珨绠℃サ鎬э細NPN
瀹夎棰�(f膿ng)鏍硷細ThroughHole
灏佽/绠遍珨锛歍O-92
闆嗛浕妤碘�旂櫦(f膩)灏勬サ鏈�澶ч浕澹揤CEO锛�60V
鐧�(f膩)灏勬サ-鍩烘サ闆诲VEBO锛�8V
闆嗛浕妤甸�ｇ簩(x霉)闆绘祦锛�0.7A
鏈�澶х洿娴侀浕闆嗛浕妤甸浕娴侊細0.7A
鍔熺巼鑰楁暎锛�0.8W
鏈�澶у伐浣滈牷鐜囷細50MHz
鏈�澶у伐浣滄韩搴︼細+150鈩�

灏佽锛欰mmo

DCCollector/BaseGainhfeMin锛�40
鏈�灏忓伐浣滄韩搴︼細-55鈩�

ksc1008gta_q鍙冩暩(sh霉)

  • 鍒堕�犲晢Fairchild Semiconductor
  • 鐢�(ch菐n)鍝佺ó椤�(l猫i)Transistors Bipolar (BJT)
  • 鏅堕珨绠℃サ鎬�NPN
  • 闆嗛浕妤碘�旂櫦(f膩)灏勬サ鏈�澶ч浕澹� VCEO60 V
  • 鐧�(f膩)灏勬サ - 鍩烘サ闆诲 VEBO8 V
  • 鏈�澶х洿娴侀浕闆嗛浕妤甸浕娴�0.7 A
  • 鐩存祦闆嗛浕妤�/Base Gain hfe Min40
  • 閰嶇疆Single
  • 鏈�澶у伐浣滈牷鐜�50 MHz
  • 鏈�澶у伐浣滄韩搴�+ 150 C
  • 瀹夎棰�(f膿ng)鏍�Through Hole
  • 灏佽 / 绠遍珨TO-92
  • 灏佽Ammo
  • 闆嗛浕妤甸�ｇ簩(x霉)闆绘祦0.7 A
  • 鏈�灏忓伐浣滄韩搴�- 55 C
  • 鍔熺巼鑰楁暎0.8 W