鏅傞枔锛�2023/3/9 14:24:44
闁辫畝锛�606
椤炲垾锛氬垎闆㈠紡鍗婂皫楂旂敘(ch菐n)鍝�
瀹跺涵锛歁OSFET锛孏aNFET - 鍠�
绯诲垪锛欻EXFET?
椤炲垾锛氬垎闆㈠紡鍗婂皫楂旂敘(ch菐n)鍝�
瀹跺涵锛歁OSFET锛孏aNFET - 鍠�
绯诲垪锛欻EXFET?
FET 鍨嬶細MOSFET N 閫氶亾锛岄噾灞哀鍖栫墿
FET 鐗归粸锛氭婧栧瀷
闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25掳 C锛�13.6 姣瓙 @ 31A, 10V
婕忔サ鑷虫簮妤甸浕澹�(Vdss)锛�55V
闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25掳 C锛�51A
Id 鏅傜殑 Vgs(th)锛堟渶澶э級锛�4V @ 250?A
闁橀浕鑽�(Qg) @ Vgs锛�46nC @ 10V
鍦� Vds 鏅傜殑杓稿叆闆诲(Ciss) 锛�1460pF @ 25V
鍔熺巼 - 鏈�澶э細82W
瀹夎椤炲瀷锛氳〃闈㈣布瑁�
灏佽/澶栨锛欴2Pak锛孴O-263锛�2 寮曠窔 + 鎺ョ墖锛�
鍖呰锛氬付鍗� (TR)
渚涙噳鍟嗚ō鍌欏皝瑁濓細D2PAK
| 寤犲晢 |
|---|
| Infineon Technologies |
