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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > IRF7907PBF

IRF7907PBF 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2023/3/9 16:12:47 鏌ョ湅 闁辫畝锛�590

    椤炲垾锛氬垎闆㈠紡鍗婂皫(d菐o)楂旂敘(ch菐n)鍝�

    瀹跺涵锛歁OSFETs - 闄ｅ垪

    绯诲垪锛欻EXFET?

  


鐩寗

姒傝堪

    椤炲垾锛氬垎闆㈠紡鍗婂皫(d菐o)楂旂敘(ch菐n)鍝�

    瀹跺涵锛歁OSFETs - 闄ｅ垪

    绯诲垪锛欻EXFET?

    FET 鍨嬶細2 鍊� N 婧濋亾锛堥洐锛�

    FET 鐗归粸锛氶倧杓浕骞抽杸

    闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25掳 C锛�16.4 姣瓙 @ 9.1A, 10V

    婕忔サ鑷虫簮妤甸浕澹�(Vdss)锛�30V

    闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25掳 C锛�9.1A, 11A

    Id 鏅傜殑 Vgs(th)锛堟渶澶э級锛�2.35V @ 25渭A

    闁橀浕鑽�(Qg) @ Vgs锛�10nC @ 4.5V

    鍦� Vds 鏅傜殑杓稿叆闆诲(Ciss) 锛�850pF @ 15V

    鍔熺巼 - 鏈�澶э細2W

    瀹夎椤炲瀷锛氳〃闈㈣布瑁�

    灏佽/澶栨锛�8-SOIC锛�3.9mm 瀵級

    鍖呰锛氱浠�

    渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細8-SO



璩囨枡

寤犲晢
Infineon / IR

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  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

irf7907pbf鍙冩暩(sh霉)

  • 妯�(bi膩o)婧�(zh菙n)鍖呰95
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  • 瀹跺涵FET - 闄ｅ垪
  • 绯诲垪HEXFET®
  • FET 鍨�2 鍊� N 婧濋亾锛堥洐锛�
  • FET 鐗归粸閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)30V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C9.1A锛�11A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C16.4 姣瓙 @ 9.1A锛�10V
  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級2.35V @ 25µA
  • 闁橀浕鑽�(Qg) @ Vgs10nC @ 4.5V
  • 杓稿叆闆诲 (Ciss) @ Vds850pF @ 15V
  • 鍔熺巼 - 鏈�澶�2W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨8-SOIC锛�0.154"锛�3.90mm 瀵級
  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�8-SO
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