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IFX1050GXUMA1 鏄嫳椋涘噷锛圛nfineon锛夊叕鍙哥敓鐢㈢殑涓�娆鹃珮鎬ц兘銆侀珮鏁堢巼鐨� MOSFET 鍔熺巼鏅堕珨绠�銆傝┎鍣ㄤ欢閲囩敤婧濇Ы寮忔妧琛撳埗閫�锛屽叿鏈変綆灏庨�氶浕闃诲拰蹇�熼枊闂滅壒鎬э紝閬╁悎鎳夌敤浜庨珮闋婚枊闂滈浕婧�銆侀浕姗熼﹨鍕曚互鍙� DC-DC 杞夋彌鍣ㄧ瓑鍫存櫙銆�
銆�銆�瑭茬敘鍝佸爆浜� OptiMOS 绯诲垪锛屽劒(y艒u)鍖栦簡鍕曟厠(t脿i)鍜岄潨鎱�(t脿i)鎬ц兘锛岃兘澶犲湪楂樺姛鐜囧瘑搴︽噳鐢ㄤ腑鎻愪緵鍗撹秺鐨勬晥鐜囧拰鍙潬鎬�銆�
鍨嬭櫉锛欼FX1050GXUMA1
銆�銆�椤炲瀷锛歂 婧濋亾 MOSFET
銆�銆�灏佽锛歍O-Leadless (TOLL)
銆�銆�VDS锛堟紡婧愭サ鎿婄┛闆诲锛夛細60 V
銆�銆�RDS(on)锛堝皫閫氶浕闃伙級锛�4.5 m惟锛堝吀鍨嬪�硷紝鍦� VGS=10V 鏅傦級
銆�銆�ID锛堥�ｇ簩(x霉)婕忔サ闆绘祦锛夛細120 A
銆�銆�Qg锛堟煹妤甸浕鑽凤級锛�43 nC
銆�銆�EAS锛堥洩宕╄兘閲忥級锛�2.9 mJ
銆�銆�fSW锛堟帹钖﹀伐浣滈牷鐜囷級锛氶珮閬� 1 MHz
銆�銆�绲愭韩鑼冨湇锛�-55掳C 鑷� +175掳C
IFX1050GXUMA1 鐨勪富瑕佺壒鎬у寘鎷互涓嬪咕榛烇細
銆�銆�1. 妤典綆鐨勫皫閫氶浕闃� RDS(on)锛屾湁鍔╀簬娓涘皯鍌冲皫鎼嶈�楋紝鎻愬崌绯荤当(t菕ng)鏁堢巼銆�
銆�銆�2. 蹇�熼枊闂滆兘鍔�锛屾敮鎸侀珮闋绘噳鐢�锛岄檷浣庨枊闂滄悕鑰椼��
銆�銆�3. 鍑鸿壊鐨勭啽鎬ц兘锛屽緱鐩婁簬 TO-Leadless 灏佽瑷▓锛岃兘澶犳湁鏁堟暎鐔�銆�
銆�銆�4. 楂橀浕娴佽檿鐞嗚兘鍔�锛屾敮鎸佸ぇ鍔熺巼鎳夌敤鍫存櫙銆�
銆�銆�5. 澧炲挤鍨嬮洩宕╄兘鍔涘拰 robustness锛堢┅(w臎n)鍋ユ�э級锛屾彁楂樺櫒浠跺湪鎯″姡姊濅欢涓嬬殑鍙潬鎬�銆�
銆�銆�6. 绗﹀悎 RoHS 妯欐簴锛岀挵(hu谩n)淇濈劇閴涜ō瑷�銆�
銆�銆�閫欎簺鐗规�т娇 IFX1050GXUMA1 鎴愮偤楂樻晥鐜囥�侀珮鍔熺巼瀵嗗害鎳夌敤鐨勭悊鎯抽伕鎿�銆�
IFX1050GXUMA1 寤ｆ硾鎳夌敤浜庝互涓嬮牁鍩燂細
銆�銆�1. 闁嬮棞闆绘簮锛圫MPS锛変腑鐨勫悓姝ユ暣娴�銆�
銆�銆�2. 闆绘椹呭嫊闆昏矾锛屽 BLDC 闆绘鎺у埗鍣�銆�
銆�銆�3. 宸ユキ(y猫)閫嗚畩鍣ㄥ拰璁婇牷鍣ㄣ��
銆�銆�4. 闆诲嫊姹借粖鍏呴浕瑷倷銆�
銆�銆�5. DC-DC 杞夋彌鍣ㄥ拰鍗囬檷澹撹綁鎻涙ā濉娿��
銆�銆�6. 澶櫧鑳藉井閫嗚畩鍣ㄥ強鍏朵粬鍙啀鐢熻兘婧愮浉闂滆ō鍌�銆�
銆�銆�鐢变簬鍏跺劒(y艒u)鐣扮殑鎬ц兘鍜屽彲闈犳�э紝閫欐 MOSFET 鍦ㄥ伐妤�(y猫)鎺у埗銆佹苯杌婇浕瀛愬強娑堣不椤為浕瀛愮敘鍝佷腑閮芥湁寤ｆ硾鎳夌敤銆�
BSC092N06NS5, IRFB4110TRPBF, FDP097N06L
