鍨嬭櫉(h脿o)锛欸A1210Y224JBXAR31G
銆�銆�椤炲瀷锛歂-Channel Power MOSFET
銆�銆�鏈�澶ф紡婧愰浕澹�(Vds)锛�60V
銆�銆�鏈�澶ф煹婧愰浕澹�(Vgs)锛毬�20V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦(Id)锛�120A
銆�銆�灏�(d菐o)閫氶浕闃�(Rds(on))锛�1.8m惟锛堝吀鍨嬪�硷級@ Vgs=10V
銆�銆�绺芥煹妤甸浕鑽�(Qg)锛�75nC
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銆�銆�宸ヤ綔婧�搴﹁寖鍦嶏��-55掳C to +175掳C
銆�銆�灏佽�濆舰寮忥細TO-247-3
銆�銆�鍔熻�楋細18W锛堝吀鍨嬪�硷級

GA1210Y224JBXAR31G 鐨勪富瑕佺壒鎬у�備笅锛�
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瑭茶姱鐗囬仼鐢ㄤ簬浠ヤ笅鎳�(y墨ng)鐢ㄥ牬(ch菐ng)鏅�锛�
銆�銆�1. 闁嬮棞(gu膩n)闆绘簮 (SMPS) 鍜� DC-DC 杞�(zhu菐n)鎻涘櫒涓�鐨勪富闁嬮��(gu膩n)鍏冧欢銆�
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IRF3205, FDP16N60C, CSD1953KCS