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GA1210H123KBXAT31G 鏄竴娆鹃珮鎬ц兘鐨勫姛鐜� MOSFET 鑺墖锛岄仼鐢ㄤ簬楂橀牷闁嬮棞闆绘簮銆丏C-DC 杞夋彌鍣ㄤ互鍙婂叾浠栭渶瑕侀珮鏁堝姛鐜囪綁鎻涚殑鎳夌敤鍫存櫙銆傝┎鑺墖閲囩敤浜嗗厛閫茬殑鍗婂皫楂斿埗閫犲伐钘�锛屽叿鏈変綆灏庨�氶浕闃诲拰蹇�熼枊闂滈�熷害鐨勭壒榛�锛岃兘澶犻’钁楁彁楂樼郴绲�(t菕ng)鐨勬晥鐜囧苟闄嶄綆鍔熻��銆�
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椤炲瀷锛氬姛鐜� MOSFET
銆�銆�灏佽褰㈠紡锛歍O-252 (DPAK)
銆�銆�鏈�澶ф紡婧愰浕澹�(Vds)锛�120V
銆�銆�鏈�澶ф煹婧愰浕澹�(Vgs)锛毬�20V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦(Id)锛�10A
銆�銆�灏庨�氶浕闃�(Rds(on))锛�12m惟锛堝吀鍨嬪��锛孷gs=10V锛�
銆�銆�绺芥煹妤甸浕鑽�(Qg)锛�48nC
銆�銆�杓稿叆闆诲(Ciss)锛�1390pF
銆�銆�鍙嶅悜鎭㈠京鏅傞枔(trr)锛�65ns
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55鈩冭嚦+175鈩�
GA1210H123KBXAT31G 鍏锋湁浠ヤ笅椤憲鐗规�э細
銆�銆�1. 妤典綆鐨勫皫閫氶浕闃� Rds(on)锛屽彲鏈夋晥娓涘皯鍌冲皫鎼嶈��锛屾彁鍗囨暣楂旀晥鐜囥��
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銆�銆�5. 绗﹀悎 RoHS 妯欐簴锛岀稜鑹茬挵(hu谩n)淇�銆�
銆�銆�6. 鍏х疆 ESD 淇濊闆昏矾锛屾彁楂樿姱鐗囩殑榄鎬�銆�
銆�銆�閫欎簺鐗规�т娇 GA1210H123KBXAT31G 鎴愮偤楂橀牷鍔熺巼杞夋彌鎳夌敤鐨勭悊鎯抽伕鎿�銆�
GA1210H123KBXAT31G 寤ｆ硾鎳夌敤浜庝互涓嬮牁鍩燂細
銆�銆�1. 闁嬮棞闆绘簮锛圫MPS锛変腑鐨勫悓姝ユ暣娴佸櫒銆�
銆�銆�2. DC-DC 杞夋彌鍣�锛屽寘鎷檷澹撱�佸崌澹撳強姝ｈ矤杞夋彌鎷撴挷銆�
銆�銆�3. 闆绘椹呭嫊鍜岃矤杓夐枊闂�銆�
銆�銆�4. LED 鐓ф槑椹呭嫊闆昏矾銆�
銆�銆�5. 宸ユキ(y猫)鎺у埗瑷倷涓殑鍔熺巼绠＄悊妯″銆�
銆�銆�6. 閫氫俊闆绘簮鍜屾湇鍕欏櫒闆绘簮绯荤当(t菕ng)銆�
銆�銆�鐢变簬鍏跺劒(y艒u)鐣扮殑鎬ц兘琛ㄧ従(xi脿n)锛岄�欐鍔熺巼 MOSFET 鍦ㄨ拷姹傞珮鏁堢巼鍜屽皬灏哄鐨勮ō瑷堜腑鍌欏彈闈掔潪銆�
GA1210H123KBXAT31GR, IRFZ44N, FDP5570
