椤炲瀷锛氬姛鐜� MOSFET
銆�銆�灏�(d菐o)閫氶浕闃伙紙Rds(on)锛夛細4.5 m惟锛堝吀鍨嬪�硷紝Vgs=10V锛�
銆�銆�鎿婄┛闆诲�擄紙V(BR)DSS锛夛細60 V
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銆�銆�鏌垫サ闆昏嵎锛圦g锛夛細60 nC锛堝吀鍨嬪�硷級
銆�銆�闁�(k膩i)闂�(gu膩n)閫熷害锛氬揩閫熼枊(k膩i)闂�(gu膩n)
銆�銆�宸ヤ綔婧�搴﹁寖鍦嶏��-55掳C 鑷� +175掳C
銆�銆�灏佽�濆舰寮忥細TO-247-3

GA1206Y683MXJBR31G 鐨勪富瑕佺壒鎬у寘鎷�锛�
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閫欐�惧姛鐜� MOSFET 寤ｆ硾鎳�(y墨ng)鐢ㄤ簬浠ヤ笅闋�(l菒ng)鍩燂細
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IRFP2907ZPBF, FDP18N60E, IXFN100N06T2