鏅傞枔锛�2025/5/28 17:41:33
闁辫畝锛�12
GA1206Y122JXJBR31G 鏄竴娆鹃珮鎬ц兘鐨� MOSFET 鍔熺巼鏅堕珨绠�锛屼富瑕佹噳鐢ㄤ簬闆绘簮绠＄悊銆侀枊闂滈浕婧愬拰闆绘椹�(q奴)鍕曠瓑闋樺煙銆傝┎鍣ㄤ欢閲囩敤浜嗗厛閫茬殑鍗婂皫楂斿埗閫犲伐钘濓紝鍏锋湁浣庡皫閫氶浕闃诲拰楂橀枊闂滈�熷害鐨勭壒榛�锛岃兘澶犻’钁楁彁鍗囩郴绲�(t菕ng)鏁堢巼骞堕檷浣庤兘鑰�銆�
銆�銆�瑭插瀷铏熷爆浜庡寮峰瀷 N 婧濋亾鍫存晥鎳夋櫠楂旂 (N-Channel Enhancement Mode Field Effect Transistor)锛屽叾瑷▓鍎�(y艒u)鍖栦簡鍦ㄩ珮闋诲伐浣滄浠朵笅鐨勬�ц兘琛ㄧ従(xi脿n)銆�
鏈�澶ф紡婧愰浕澹擄細60V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛�12A
銆�銆�灏庨�氶浕闃伙細1.8m惟
銆�銆�鏌垫サ闆昏嵎锛�25nC
銆�銆�绺介浕瀹癸細450pF
銆�銆�鍔熻�楋細144W
銆�銆�绲�(ji茅)婧寖鍦嶏細-55鈩� 鑷� +175鈩�
GA1206Y122JXJBR31G 鍏锋湁浠ヤ笅闂滈嵉鐗规�э細
銆�銆�1. 妤典綆鐨勫皫閫氶浕闃�锛屾湁鏁堟笡灏戝偝灏庢悕鑰椼��
銆�銆�2. 蹇�熼枊闂滆兘鍔�锛岄仼鍚堥珮闋绘噳鐢�銆�
銆�銆�3. 楂橀洩宕╄兘閲忚�愬彈鎬�锛屽寮蜂簡鍣ㄤ欢鐨勫彲闈犳��銆�
銆�銆�4. 閲囩敤绶婃箠鍨嬪皝瑁濇妧琛�锛岀瘈(ji茅)鐪� PCB 绌洪枔銆�
銆�銆�5. 绗﹀悎 RoHS 妯欐簴锛岀稜鑹茬挵(hu谩n)淇濄��
銆�銆�閫欎簺鐗规�т娇寰楄┎鍣ㄤ欢鍦ㄥ悇绋珮鏁堢巼鍔熺巼杞�(zhu菐n)鎻涙噳鐢ㄤ腑琛ㄧ従(xi脿n)鍑鸿壊銆�
瑭茶姱鐗囧唬娉涚敤浜庝互涓嬮牁鍩燂細
銆�銆�1. 闁嬮棞闆绘簮 (Switching Power Supplies)銆�
銆�銆�2. DC/DC 杞�(zhu菐n)鎻涘櫒銆�
銆�銆�3. 闆绘椹�(q奴)鍕曟帶鍒�銆�
銆�銆�4. 闆绘睜绠＄悊绯荤当(t菕ng) (Battery Management Systems, BMS)銆�
銆�銆�5. 宸ユキ(y猫)鑷嫊鍖栬ō鍌欎腑鐨勫姛鐜囪(di脿o)绡�(ji茅)銆�
銆�銆�6. 閫氫俊鍩虹瑷柦涓殑楂樻晥闆绘簮瑙ｆ焙鏂规銆�
銆�銆�鐢变簬鍏跺崜瓒婄殑闆绘埃鐗规�у拰鍙潬鎬�锛孏A1206Y122JXJBR31G 鎴愮偤瑷卞楂樿姹傛噳鐢ㄥ牬鏅殑鐞嗘兂閬告搰銆�
GA1206Y122JXJBR32G, IRFZ44N, FDP55N06L
