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鍨嬭櫉锛欸A1206A220JBEBT31G
銆�銆�椤炲瀷锛歂-Channel MOSFET
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銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦(Id)锛�220A
銆�銆�灏庨�氶浕闃�(Rds(on))锛�1.5m惟
銆�銆�鏌垫サ闆昏嵎(Qg)锛�80nC
銆�銆�绺藉姛鑰�(Ptot)锛�150W
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55掳C to 175掳C
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銆�銆�鍦ㄥ皝瑁濇柟闈�锛孏A1206A220JBEBT31G閲囩敤浜嗗劒(y艒u)鍖栫殑灏佽鎶�琛�(sh霉)锛屾彁渚涗簡鍗撹秺鐨勬暎鐔辨�ц兘锛屾湁鍔╀簬寤堕暦鐢�(ch菐n)鍝佺殑浣跨敤澹藉懡銆�
GA1206A220JBEBT31G寤ｆ硾鎳夌敤浜庡悇绋珮鍔熺巼闆诲瓙绯荤当(t菕ng)涓紝鍖呮嫭浣嗕笉闄愪簬浠ヤ笅闋樺煙锛�
銆�銆�- 闁嬮棞(gu膩n)闆绘簮(SMPS)
銆�銆�- 闆绘椹�(q奴)鍕�
銆�銆�- 宸ユキ(y猫)鑷嫊鍖�
銆�銆�- 澶櫧鑳介�嗚畩鍣�
銆�銆�- 闆诲嫊杌婅紱鐗藉紩閫嗚畩鍣�
銆�銆�- 涓嶉枔鏂烽浕婧�(UPS)
銆�銆�鐢变簬鍏堕珮闆绘祦鎵胯級鑳藉姏鍜岄珮鏁堢殑闁嬮棞(gu膩n)鎬ц兘锛岄�欐鑺墖鎴愮偤浜嗙溇澶氶珮鍔熺巼鎳夌敤鐨勭悊鎯抽伕鎿�銆�
GA1206A200JBE, IRFB4110PBF, FDP16N60
