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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > FST8380M

FST8380M 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2023/3/1 11:43:49 鏌ョ湅 闁辫畝锛�362

    鍒堕�犲晢锛欸eneSiCSemiconductor

    RoHS锛氭槸

    鐢�(ch菐n)鍝侊細SchottkyDiodes

   

鐩寗

姒傝堪

    鍒堕�犲晢锛欸eneSiCSemiconductor

    RoHS锛氭槸

    鐢�(ch菐n)鍝侊細SchottkyDiodes

    宄板�煎弽鍚戦浕澹擄細80V

    姝ｅ悜閫ｇ簩(x霉)闆绘祦锛�80A

    鏈�澶ф氮娑岄浕娴侊細800A

    姝ｅ悜闆诲涓嬮檷锛�0.88V

    鏈�澶у弽鍚戞紡娉勯浕娴侊細1uA

    宸ヤ綔婧害鑼冨湇锛�-40Cto+175C

    瀹夎棰ㄦ牸锛歍hroughHole

    灏佽/绠遍珨锛欴61-3M

    灏佽锛欱ulk


璩囨枡

寤犲晢
GeneSiC Semiconductor

fst8380m鎺ㄨ枽渚涙噳鍟� 鏇村>

  • 鐢�(ch菐n)鍝佸瀷铏�
  • 渚涙噳鍟�
  • 鏁�(sh霉)閲�
  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児

fst8380m璩囨枡 鏇村>

  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

fst8380m鍙冩暩(sh霉)

  • 鍒堕�犲晢GeneSiC Semiconductor
  • 鐢�(ch菐n)鍝�Schottky Diodes
  • 宄板�煎弽鍚戦浕澹�80 V
  • 姝ｅ悜閫ｇ簩(x霉)闆绘祦80 A
  • 鏈�澶ф氮娑岄浕娴�800 A
  • 姝ｅ悜闆诲涓嬮檷0.88 V
  • 鏈�澶у弽鍚戞紡娉勯浕娴�1 uA
  • 宸ヤ綔婧害鑼冨湇- 40 C to + 175 C
  • 瀹夎棰ㄦ牸Through Hole
  • 灏佽 / 绠遍珨D61-3M
  • 灏佽Bulk