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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫�(ch菐ng)缍�(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺(c猫)

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > FQU10N20LTU

FQU10N20LTU 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2023/11/30 17:43:05 鏌ョ湅 闁辫畝锛�621

椤炲垾锛氬垎闆㈠紡鍗婂皫(d菐o)楂旂敘(ch菐n)鍝�

鐩寗

姒傝堪

椤炲垾锛氬垎闆㈠紡鍗婂皫(d菐o)楂旂敘(ch菐n)鍝�
瀹跺涵锛歁OSFET锛孏aNFET - 鍠�
绯诲垪锛歈FET?
FET 鍨嬶細MOSFET N 閫氶亾锛岄噾灞哀鍖栫墿
FET 鐗归粸(di菐n)锛氶倧杓浕骞抽杸
闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25掳 C锛�360 姣瓙 @ 3.8A, 10V
婕忔サ鑷虫簮妤甸浕澹�(Vdss)锛�200V
闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25掳 C锛�7.6A
Id 鏅�(sh铆)鐨� Vgs(th)锛堟渶澶э級锛�2V @ 250渭A
闁橀浕鑽�(Qg) @ Vgs锛�17nC @ 5V
鍦� Vds 鏅�(sh铆)鐨勮几鍏ラ浕瀹�(Ciss) 锛�830pF @ 25V
鍔熺巼 - 鏈�澶э細2.5W
瀹夎椤炲瀷锛氶�氬瓟
灏佽/澶栨锛欼Pak, TO-251, DPak, VPak (3 鐩村紩绶� + 鎺ョ墖)
鍖呰锛氱浠�

fqu10n20ltu鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

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  • 渚涙噳(y墨ng)鍟�
  • 鏁�(sh霉)閲�
  • 寤犲晢
  • 灏佽/鎵硅櫉(h脿o)
  • 瑭㈠児(ji脿)

fqu10n20ltu鍙冩暩(sh霉)

  • 鐢�(ch菐n)鍝佸煿瑷�(x霉n)妯″High Voltage Switches for Power Processing
  • 妯�(bi膩o)婧�(zh菙n)鍖呰70
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 鍠�
  • 绯诲垪QFET™
  • FET 鍨�MOSFET N 閫氶亾锛岄噾灞哀鍖栫墿
  • FET 鐗归粸(di菐n)閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)200V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C7.6A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C360 姣瓙 @ 3.8A锛�10V
  • Id 鏅�(sh铆)鐨� Vgs(th)锛堟渶澶э級2V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs17nC @ 5V
  • 杓稿叆闆诲 (Ciss) @ Vds830pF @ 25V
  • 鍔熺巼 - 鏈�澶�2.5W
  • 瀹夎椤炲瀷閫氬瓟
  • 灏佽/澶栨TO-251-3 鐭紩绶�锛孖Pak锛孴O-251AA
  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�I-Pak
  • 鍖呰绠′欢