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鎮ㄥソ锛屾杩庝締(l谩i)鍒扮董搴�(k霉)闆诲瓙甯傚牬(ch菐ng)缍�(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺(c猫)

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩�(g貌u)缍�(w菐ng) > IC鐧剧 > FDS4935A

FDS4935A 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2022/10/9 13:55:37 鏌ョ湅 闁辫畝锛�689

    FAIRCHILD SEMICONDUCTOR  FDS4935A  闆欒矾鍫�(ch菐ng)鏁堟噳(y墨ng)绠�, MOSFET, 闆橮婧濋亾, -7 A, -30 V, 23 mohm, -10 V, -1.6 V

姒傝堪

    FAIRCHILD SEMICONDUCTOR  FDS4935A  闆欒矾鍫�(ch菐ng)鏁堟噳(y墨ng)绠�, MOSFET, 闆橮婧濋亾, -7 A, -30 V, 23 mohm, -10 V, -1.6 V

鍙冩暩(sh霉)

    椤嶅畾闆诲(DC)锛�-30.0 V

    椤嶅畾闆绘祦锛�-7.00 A

    椤嶅畾鍔熺巼锛�1.6 W

    閫氶亾鏁�(sh霉)锛�

    閲濊叧鏁�(sh霉)锛�

    婕忔簮妤甸浕闃伙細23 m惟

    妤垫�э細P-Channel, Dual P-Channel

    鑰楁暎鍔熺巼锛�1.6 W

    杓稿叆闆诲锛�1.23 nF

    鏌甸浕鑽凤細15.0 nC

    婕忔簮妤甸浕澹�(Vds)锛�30 V

    婕忔簮鎿婄┛闆诲锛�30 V

    鏌垫簮鎿婄┛闆诲锛毬�20.0 V

    閫ｇ簩(x霉)婕忔サ闆绘祦(Ids)锛�7.00 A

    涓婂崌鏅�(sh铆)闁擄細10 ns

    杓稿叆闆诲(Ciss)锛�1233pF @15V(Vds)

    椤嶅畾鍔熺巼(Max)锛�900 mW

    涓嬮檷鏅�(sh铆)闁擄細25 ns

    宸ヤ綔婧害(Max)锛�175 鈩�

    宸ヤ綔婧害(Min)锛�-55 鈩�

    鑰楁暎鍔熺巼(Max)锛�2 W

    瀹夎鏂瑰紡锛歋urface Mount

    寮曡叧鏁�(sh霉)锛�

    灏佽锛歋OIC-8

    闀�(zh菐ng)搴︼細5 mm

    瀵害锛�3.9 mm

    楂樺害锛�1.5 mm

    灏佽锛歋OIC-8

    宸ヤ綔婧害锛�-55鈩� ~ 175鈩�


fds4935a鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

  • 鐢�(ch菐n)鍝佸瀷铏�(h脿o)
  • 渚涙噳(y墨ng)鍟�
  • 鏁�(sh霉)閲�
  • 寤犲晢
  • 灏佽/鎵硅櫉(h脿o)
  • 瑭㈠児(ji脿)

fds4935a璩囨枡 鏇村>

  • 鍨嬭櫉(h脿o)
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

fds4935a鍙冩暩(sh霉)

  • 鐢�(ch菐n)鍝佸煿瑷�(x霉n)妯″High Voltage Switches for Power Processing
  • 妯�(bi膩o)婧�(zh菙n)鍖呰2,500
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 闄ｅ垪
  • 绯诲垪PowerTrench®
  • FET 鍨�2 鍊�(g猫) P 婧濋亾锛堥洐锛�
  • FET 鐗归粸(di菐n)閭忚集闆诲钩闁�(m茅n)
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)30V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C7A
  • 闁�(k膩i)鎱�(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C23 姣瓙 @ 7A锛�10V
  • Id 鏅�(sh铆)鐨� Vgs(th)锛堟渶澶э級3V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs21nC @ 5V
  • 杓稿叆闆诲 (Ciss) @ Vds1233pF @ 15V
  • 鍔熺巼 - 鏈�澶�900mW
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨8-SOIC锛�0.154"锛�3.90mm 瀵級
  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�8-SOICN
  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūFDS4935ATR