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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫 鐧婚寗 | 鍏嶈不娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫 > IC鐧剧 > FDMB668P

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鐢㈠搧绋锛歁OSFET灏忎俊铏�

鐩寗

姒傝堪

鍒堕�犲晢锛欶airchildSemiconductor
鐢㈠搧绋锛歁OSFET灏忎俊铏�
RoHS锛氭槸
閰嶇疆锛歋ingleHexDrain
鏅堕珨绠℃サ鎬э細P-Channel
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姝ｅ悜璺ㄥ皫gFS锛堟渶澶у��/鏈�灏忓�硷級锛�27S
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鍔熺巼鑰楁暎锛�1.9W
鏈�澶у伐浣滄韩搴︼細+150鈩�

瀹夎棰ㄦ牸锛歋MD/SMT
灏佽/绠遍珨锛歁icroFET-8
灏佽锛歊eel
鏈�灏忓伐浣滄韩搴︼細-55鈩�

fdmb668p鎺ㄨ枽渚涙噳鍟� 鏇村>

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  • 鏁搁噺
  • 寤犲晢
  • 灏佽/鎵硅櫉
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  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

fdmb668p鍙冩暩

  • 妯欐簴鍖呰3,000
  • 椤炲垾鍒嗛洟寮忓崐灏庨珨鐢㈠搧
  • 瀹跺涵FET - 鍠�
  • 绯诲垪PowerTrench®
  • FET 鍨�MOSFET P 閫氶亾锛岄噾灞哀鍖栫墿
  • FET 鐗归粸閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)20V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C6.1A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C35 姣瓙 @ 6.1A锛�4.5V
  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級1V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs59nC @ 10V
  • 杓稿叆闆诲 (Ciss) @ Vds2085pF @ 10V
  • 鍔熺巼 - 鏈�澶�800mW
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨8-MLP锛孧icroFET?
  • 渚涙噳鍟嗚ō鍌欏皝瑁�8-MLP锛孧icroFET锛�3x1.9锛�
  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūFDMB668PTR