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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫 鐧婚寗 | 鍏嶈不娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫 > IC鐧剧 > FDMB506P

FDMB506P 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2023/12/19 18:00:00 鏌ョ湅 闁辫畝锛�325

椤炲垾锛氬垎闆㈠紡鍗婂皫楂旂敘鍝�

鐩寗

姒傝堪

椤炲垾锛氬垎闆㈠紡鍗婂皫楂旂敘鍝�
瀹跺涵锛歁OSFET锛孏aNFET - 鍠�
绯诲垪锛歅owerTrench?
FET 鍨嬶細MOSFET P 閫氶亾锛岄噾灞哀鍖栫墿
FET 鐗归粸锛氶倧杓浕骞抽杸
闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25掳 C锛�30 姣瓙 @ 6.8A, 4.5V
婕忔サ鑷虫簮妤甸浕澹�(Vdss)锛�20V
闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25掳 C锛�6.8A
Id 鏅傜殑 Vgs(th)锛堟渶澶э級锛�1.5V @ 250渭A
闁橀浕鑽�(Qg) @ Vgs锛�30nC @ 4.5V
鍦� Vds 鏅傜殑杓稿叆闆诲(Ciss) 锛�2960pF @ 10V
鍔熺巼 - 鏈�澶э細1.9W
瀹夎椤炲瀷锛氳〃闈㈣布瑁�
灏佽/澶栨锛�8-MLP, MicroFET?
鍖呰锛氬付鍗� (TR)

fdmb506p鎺ㄨ枽渚涙噳鍟� 鏇村>

  • 鐢㈠搧鍨嬭櫉
  • 渚涙噳鍟�
  • 鏁搁噺
  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児

fdmb506p璩囨枡 鏇村>

  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

fdmb506p鍙冩暩

  • 妯欐簴鍖呰3,000
  • 椤炲垾鍒嗛洟寮忓崐灏庨珨鐢㈠搧
  • 瀹跺涵FET - 鍠�
  • 绯诲垪PowerTrench®
  • FET 鍨�MOSFET P 閫氶亾锛岄噾灞哀鍖栫墿
  • FET 鐗归粸閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)20V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C6.8A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C30 姣瓙 @ 6.8A锛�4.5V
  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級1.5V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs30nC @ 4.5V
  • 杓稿叆闆诲 (Ciss) @ Vds2960pF @ 10V
  • 鍔熺巼 - 鏈�澶�1.9W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨8-MLP锛孧icroFET?
  • 渚涙噳鍟嗚ō鍌欏皝瑁�8-MLP锛孧icroFET锛�3x1.9锛�
  • 鍖呰甯跺嵎 (TR)