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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > FDA28N50F

FDA28N50F 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2024/1/25 14:04:54 鏌ョ湅 闁辫畝锛�534

FDA28N50F鏄竴绋牬鏁堟噳(y墨ng)绠★紙Field Effect Transistor锛孎(xi脿n)ET锛夛紝涔熺ū鐐烘櫠楂旂锛屾槸涓�绋浕瀛愯ō(sh猫)鍌�锛岀敤浜庢斁澶у拰鎺у埗闆绘祦銆侳DA28N50F鏄竴绋甆婧濋亾MOSFET锛圡etal-Oxide-Semiconductor Field-Effect Transistor锛�锛屽叿鏈変綆闆婚樆銆侀珮闆诲鍜岄珮闆绘祦鐨勭壒榛�(di菐n)銆�
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鍩烘湰绲�(ji茅)妲�(g貌u)

FDA28N50F鐨勫熀鏈祼(ji茅)妲�(g貌u)鍖呮嫭婧愭サ銆佹煹妤靛拰婕忔サ銆傛簮妤垫槸鍫存晥鎳�(y墨ng)绠＄殑杓稿嚭绔紝鏌垫サ鐢ㄤ簬鎺у埗婕忔サ鍒版簮妤电殑闆绘祦锛屾紡妤靛墖鏄牬鏁堟噳(y墨ng)绠＄殑杓稿叆绔��
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姝ゅ锛孎(xi脿n)DA28N50F閭勫叿鏈夎紨鍔╃祼(ji茅)妲�(g貌u)锛屽婧愮礆/婕忕礆鍙嶆帴浜屾サ绠★紙body diode锛夊拰婧愮礆/婕忕礆閲戝爆-姘寲纭�-姘у寲鐗�-鍗婂皫(d菐o)楂旓紙MOS-Oxide-Semiconductor锛夌祼(ji茅)妲�(g貌u)銆傞�欎簺杓斿姪绲�(ji茅)妲�(g貌u)浣垮緱FDA28N50F鍏锋湁鏇村ソ鐨勯浕娴佸拰闆诲鐗规��锛屾彁楂樹簡鍣ㄤ欢鐨勫彲闈犳�у拰鎬ц兘銆�

宸ヤ綔鍘熺悊

FDA28N50F鏄竴绋甆婧濋亾MOSFET锛屽叾宸ヤ綔鍘熺悊鍩轰簬鍫存晥鎳�(y墨ng)鏅堕珨绠＄殑鍘熺悊銆傜暥(d膩ng)鏂藉姞姝ｅ悜闆诲锛圴gs锛夋檪(sh铆)锛屽舰鎴愭簼閬撳崁(q奴)鍩燂紝闆绘祦鍙互閫氶亷婧濋亾寰炴簮妤垫祦鍚戞紡妤�銆傜暥(d膩ng)Vgs鐐洪浂鎴栬矤(f霉)鍊兼檪(sh铆)锛屾簼閬撹鎴�?c谩i)?锛岄浕娴佺劇娉曢�氶亷銆�

鍙冩暩(sh霉)

椤嶅畾闆诲锛圴ds锛夛細500V
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銆�銆�灏�(d菐o)閫氶浕闃伙紙Rds(on)锛夛細0.18惟锛堟渶澶у�硷級
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鐗归粸(di菐n)

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瀹夎瑕侀粸(di菐n)

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銆�銆�1銆侀鍏�锛岀⒑淇濆畨瑁濈挵(hu谩n)澧冨共鐕�銆佺劇濉�锛屽苟閬垮厤闈滈浕骞叉摼銆傚缓璀板湪闈滈浕闃茶(h霉)鍗�(q奴)鍩熼��(j矛n)琛屽畨瑁濇搷浣�銆�
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fda28n50f鍙冩暩(sh霉)

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